Equivalent base resistance of point-contact transistors
نویسندگان
چکیده
منابع مشابه
Transistors – From Point Contact to Single Electron
The first solid state electron device was the metal-semiconductor rectifier discovered by Ferdinand Braun in 1874 even before the discovery of the electron! He found that mercury metal contacts on copper or iron sulphide gave non-linear currentvoltage characteristics. In 1904 J C Bose obtained a U.S patent for point contact rectifiers on Galena (PbS). He found that the direction of rectificatio...
متن کاملContact resistance and shot noise in graphene transistors
Graphene’s distinctive band structure gives rise to exciting new transport properties and promising applications for carbon-based electronics.1–3 When measuring the conductance or current noise in a nanotube or a sheet of graphene, the properties of the contacts can matter as much as the electronic structure of the nanotube or graphene itself. In semiconducting nanotubes or graphene nanoribbons...
متن کاملContact resistance in organic transistors that use source and drain electrodes formed by soft contact lamination
Soft contact lamination of source/drain electrodes supported by gold-coated high-resolution rubber stamps against organic semiconductor films can yield high-performance organic transistors. This article presents a detailed study of the electrical properties of these devices, with an emphasis on the nature of the laminated contacts with the pand n-type semiconductors pentacene and copper hexadec...
متن کاملUniversal point contact resistance between thin-film superconductors
Michael Hermele,1 Gil Refael,2 Matthew P. A. Fisher,3 and Paul M. Goldbart4 1Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA 2Department of Physics, California Institute of Technology, Pasadena, California 91125, USA 3Kavli Institute for Theoretical Physics, University of California, Santa Barbara, California 93106, USA 4Department of Physics, U...
متن کاملCharacterization of tunnel-barriers in polycrystalline Si point-contact single-electron transistors
1 Hitachi Cambridge Laboratory, Hitachi Europe Ltd., Madingley Road, Cambridge, CB3 0HE, UK 2 Microelectronics Research Centre, University of Cambridge, Madingley Road, Cambridge CB3 0HE, UK 3 Dept. of Electronics and Information Systems, Osaka University, 2-1, Suita, Yamada-oka, Osaka, Japan CREST, JST (Japan Science and Technology) * TEL : +44 1223 467944, FAX :+44 1223 467942, E-mail : furut...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Applied Scientific Research
سال: 1958
ISSN: 0003-6994,1573-1987
DOI: 10.1007/bf02282033